Abstract
High quality, epitaxial, AlGaAs and InGaP thin films have been grown by metal organic chemical vapor deposition (MOCVD) on flexible metal substrates using buffered GaAs on ion-beam textured epitaxial templates. The grown AlGaAs and InGaP films exhibit strong (00I) orientation and sharp in-plane texture. We also report preliminary developments on AlGaAs/GaAs and InGaP/GaAs double heterostructures (DH) to measure minority carrier life-time of GaAs thin films grown using MOCVD. Deposition of undoped AlGaAs was done on flexible GaAs/Ge template with a target Al concentration of 10–40 %, at different growth temperatures (650−800 oC) and 20 Torr process pressure. We have observed minority carrier lifetime of greater than 2 ns for GaAs films grown at 650 oC and sandwiched between Al 0 .2Ga 0 . 8 As DH grown at 750 oC. Deposition of lattice matched updoped In 0 . 48 Ga 0 . 52 P/GaAs is also in progress. Epitaxial AlGaAs and InGaP can be further utilized in the fabrication of flexible low-cost III-V solar cells on metal substrates.
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