Abstract
We present a two-dimensional model of ion implantation which allows for position dependent lateral moments. The lateral standard deviation and the lateral kurtosis as a function of depth have been calculated by 2-D Monte-Carlo simulations for boron, phosphorus, arsenic, and antimony in silicon for energies in the range of 10–300 keV. The lateral moments as a function of depth and energy as well as the vertical moments as a function of energy have been fitted by simple formulae. We specify two types of distribution functions the parameters of which can be adjusted to given values of standard deviation and kurtosis. In this way the depth dependent lateral moments can be included into analytical distribution functions.
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