Abstract
A new analytical surface potential and threshold voltage model for a SOI MOSFET device with electrically shallow junction is presented to investigate the short-channel effects (SCEs). Our model includes the effects of the source/drain and body doping concentrations, the side and main gate lengths and their work functions, applied drain and substrate biases, the thickness of the gate and buried oxide and also the silicon thin film. We demonstrate that the surface potential in the main channel region is screened from the changes in the drain potential resulting in reduced SCEs. Simulation results using a 2-D device simulator are used to verify the validity of this model for various cases.
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