Modeling of parameters for nano‐scale surrounding‐gate MOSFET considering quantum mechanical effect

Abstract

In this paper, an analytical surface potential and threshold voltage model for surrounding gate metal‐oxide semiconductor field‐effect transistor are proposed considering the quantum mechanical effect (QME). Considering variable Fermi potential along the channel, a simple relation between the eigen energies and the potential energy distribution is also provided for the first time. The variation of surface potential and the threshold voltage due to QMEs are computed analytically without using any numerical iteration technique in the model. QME on drain‐induced barrier lowering and threshold voltage roll‐off are also studied to provide a more accurate model. The proposed models are compared with existing surface potential and threshold voltage models and validated by comparing with the simulated results obtained from the 2D device simulator ATLAS of Integrated Systems Engineering Technology Computer Aided Design (ISE TCAD). Very good agreement of our model with TCAD is obtained for a wide variation of device parameters. Hence, the models will aid the designing of practical surrounding gate nano‐wire transistors. Copyright © 2013 John Wiley & Sons, Ltd.