Abstract
In this paper, a 2-D analytical model for surface potential and threshold voltage of novel vertical super-thin body (VSTB) FET has been derived by solving 2-D Poisson equation. The analytical surface potential expression for gate-side surface and sidewall side surface has been modeled using parabolic surface potential approximation. The threshold voltage model for the VSTB FET has been derived by applying strong inversion criterion at the surface potential minimum value. The threshold voltage model for the VSTB FET has been analyzed by varying the body thickness, oxide thickness, and channel doping concentrations. The drain-induced barrier lowering and threshold voltage roll-off parameters are also extracted and analyzed for different body thicknesses. The models for surface potential and threshold voltage have been compared with the results obtained from the 2-D numerical device simulator and a very good agreement between the two has been observed.
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