Two-dimensional modeling of the underlap graded-channel FinFET

Abstract

The graded n-channel underlap fin-shaped field-effect transistor (FinFET) provides ample scope for future investigation. This device and the effects of the underlap, gate length, and doping concentration of the short channel are analyzed herein using two-dimensional (2-D) modeling. The proposed structure includes four regions, in each of which a potential function is developed by applying boundary conditions on Poisson’s equation. The parabolic potential profiles in the graded channel region and the underlap regions are found to depend on the bias at the gate/drain terminals, the doping profile, the channel length, and the underlap length, ensuring the reliability of the device for low-power circuit applications. The results of this analysis are validated against numerical solutions obtained using a 2-D device simulator, revealing an exact match.