Compairing FinFETs: SOI Vs Bulk: Process variability, process cost, and device performance

Abstract

Keeping up with the recognition of FinFET(FIN shaped Field Effect Transistor) devices, this paper focuses on the different flavors of FinFETs. FinFET technologies appeared to outperform conventional planar technologies for the circuit designs where power and less area low is required. Since long era, there is a trade-off between the speed, power and area. Therefore, FinFET Technology finds the major role in such applications. Short Channel effects were the vital problems for conventional planar technologies and these Short Channel effects can be overcome by FinFET technologies. In this paper, SOI (Silicon-on-insulator) FinFETand bulk FinFET are analyzed by a three dimensional device simulator and their performances are compared for different channel lengths and bias conditions. Various channel lengths parameters like, threshold voltage and sub-threshold voltage swing has been examined. Drain characteristics have been plotted which shows improved performance in case of bulk FinFET over its SOI counterpart.