Abstract
A new 2-D analytical model is developed for the current gain β of self-aligned submicrometer bipolar transistors. It takes into account the actual shape of the emitter-base junction, the presence of the built-in electric field and the recombination in the extrinsic base. The model is in good quantitative agreement with the results of numerical simulations and provides an analytical basis for a detailed interpretation of the β-dependence on device physical and geometrical parameters.
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