Abstract
We have studied electroluminescence related to transport in a two-dimensional electron gas located at an n-type GaAs GaAlAs interface, at sample temperatures from 10 to 300 K. At all temperatures, GaAs band-to-band recombination radiation is seen, and in addition, at 10 K is also observed exciton recombination related to GaAs, recombination of electrons in the two-dimensional layer with holes in GaAs, and conduction-band to carbon-acceptor transitions. However, no radiation which could be related to Si donors or to GaAlAs could be detected. Data sets showing photon yields and electrical current versus sample potentials are presented, and a qualitative discussion is given.
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