Abstract
The short-circuit current of both diffused and n-type metal semiconductor junctions during 2-MeV electron irradiation was measured. The results indicate that electron diffusion length in the Zn-diffused p-type region is proportional to the reciprocal of the square root of the donor concentration. The electron-diffusion length ranges from 20 μ for lightly doped diodes to 2 μ for heavily doped diodes. The hole-diffusion lengths are less than 1.0 μ in heavily doped surface barrier diodes. The thickness of the active radiative recombination region for diffused diodes under forward bias was measured and compared with the short-circuit current results. These results suggest that the pre-irradiation electron lifetime is ≈ (10−9 ND)−1, where ND is the substrate donor concentration. This behavior is consistent with radiative recombination between donors and free holes.
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