Abstract
Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 {micro}m) bandgaps exhibit external quantum efficiencies of 59% at 2 {micro}m, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 {micro}m in 8-{micro}m-wide p-InGaAsSb layers and hole diffusion lengths of 3 {micro}m in 6-{micro}m-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.
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