Abstract
Based on the behaviour of the energy position and shape of the photoluminescence (PL) spectra of InN layers versus electron concentration, and on the theory of the PL emission in degenerate semiconductors, we separate the spectra into three main groups. As a consequence the near band edge luminescence was interpreted as being dominated by: (i) recombination of electrons from the bottom of the conduction band to shallow acceptor levels in low doped InN; (ii) free‐to‐bound radiative recombination (FBRR) of degenerate electrons from the conduction band with nonequilibrium holes located in the valence band tails in moderately doped InN and (iii) FBRR with a blue shift due to pushing‐up of nonequilibrium holes over the thermal equilibrium level in the valence band tails in highly doped InN.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
