Abstract
Tunneling currents in InGaAs homojunctions were studied from measurements of temperature dependence of breakdown voltage, current-voltage characteristics, tunneling effective mass, and noise spectrum. Zener emission dominates the reverse current prior to avalanche breakdown in the carrier concentration region of >10 15 cm −3 and restricts the avalanche gain in InGaAs homojunctions. An InGaAs/InP hetero-structure having a p-n junction in the InP layer was studied to reduce dark currents caused by Zener emission. A design chart to aid in the realization of a high performance APD is discussed.
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