Temperature dependence of breakdown voltage in InAlAs/InGaAs HEMTs: theory and experiments

C.S Putnam,M.H Somerville,J.A Del Alamo,P.C Chao,K.G Duh

doi:10.1109/iciprm.1997.600091

Temperature dependence of breakdown voltage in InAlAs/InGaAs HEMTs: theory and experiments

C.S Putnam, M.H Somerville + Show 3 more

https://doi.org/10.1109/iciprm.1997.600091

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Publication Date: May 11, 1997

Citations: 16

Affiliation: Massachusetts Institute of Technology, Nashua School District

#Temperature Dependence Of Breakdown Voltage #High Electron Mobility Transistors + Show 8 more

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Abstract

We present results of an experimental and theoretical study of the temperature dependence of the off-state breakdown voltage of InAlAs/InGaAs high electron mobility transistors (HEMTs). We find that the breakdown voltage (BV) has a negative temperature coefficient that is more prominent for lower values of the extrinsic sheet carrier concentration (n/sub s/). Structural parameters such as the insulator thickness and top-to-bottom delta doping ratio have little effect on BV if n/sub s/ is held constant. These results are consistent with an extension of a new tunneling model for breakdown in HEMTs to include thermionic-field emission.

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