Abstract
The temperature dependence of the breakdown voltage V BD and on-resistance R ON of LDMOS devices is studied. The analysis is based on incorporating the temperature-dependent characteristics of the basic physical parameters into existing models to calculate V BD and R ON . The effects of temperature on mobility, bandgap, intrinsic concentration, Fermi level, and resistivity of the material are taken into account. Avalanche breakdown is assumed and the partial ionization, at room temperature, of impurity atoms is considered. The contribution of the depletion mode device to R ON is assumed to be negligibly small compared with that of the enhancement-mode transistor and the main bulk resistance.
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