Abstract
Hall effect measurements for temperatures ranging from 77 to 320 K on a series of p-ZnSe films grown on GaAs substrates are reported. The ZnSe epilayers were doped using a nitrogen plasma source during growth by molecular beam epitaxy. A Zn(Se,Te) graded band-gap layer was used to provide ohmic contacts over the temperature range of the measurements. The activation energy of nitrogen in ZnSe at the infinite dilution limit was found to be 114 meV, and compensation ratios ranged from 6% to 11%.
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