Abstract
We have grown p-type ZnSe 1-x Te x :N (x equals 0.08 - 1.0) epilayers by molecular beam epitaxy on GaAs substrates, and characterized their electrical behavior. The Te fraction x was determined by energy-dispersive x-ray spectroscopy and by high-resolution x-ray diffraction. The free-hole concentrations and mobilities were determined by Hall-effect measurements, and the contact resistances of evaporated PdAu metal to the epilayers were measured using standard transmission-line techniques. The contact resistance decreases sharply with increasing Te content, falling from 0.6 (Omega) cm 2 for a film with 8% Te to 3.5 multiplied by 10 -7 (Omega) cm 2 for a pure ZnTe film. Under the growth and doping conditions used, the hole mobility shows a minimum of about 1 cm 2 /Vs at about 25% Te. It is expected that by optimizing these single-layer properties, the building blocks of an improved electrical contact to ZnSe can be obtained.
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