Abstract
This work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for derivation of minority carrier concentration within the base. With the help of derived expression, an analytical model has been developed for turn-off voltage of IGBT in all minority carrier lifetime conditions. Better agreements with experimental data have been found compared to the linear model generally used. Finally, the implications of carrier lifetime dependence on the anode voltage are discussed, including implementation of such a carrier lifetime measurement technique.
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