Minority carrier lifetime profile into switching analysis of IGBT through parabolic approximation

Abstract

This paper introduces a detailed study of minority carrier lifetime profile into transient anode voltage and current modeling of Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). The minority carrier concentration has been modeled through parabolic approximation. With the new approach, an analytical model has been developed for turn-off voltage and current of IGBT in all minority carrier lifetime conditions. Consistency with the experimental results has been found compared to the previously used linear model. Finally, the implications of carrier lifetime dependence on the switching analysis are discussed.