Abstract
This paper introduces a detailed study of minority carrier lifetime dependence into switching power loss calculation of Non-Punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for modeling the minority carrier concentration within the base. In virtue of this new expression an analytical model has been developed for transient turn-off voltage and current of IGBT in all minority carrier lifetime conditions. Better consistency with the practical results has been found for this parabolic model compared to the previously used linear model. Finally, the implications of carrier lifetime dependence on the calculation of switching power loss have been discussed.
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