Abstract
In many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping concentration through investigation into transient anode voltage modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for derivation of minority carrier concentration within the base. With the derived expression, an analytical model has been developed for turn-off anode voltage of IGBT in all doping profile conditions. Better agreements with the experimental results have been found compared to the previously used linear model. Finally, the implications of base doping dependence on the anode voltage are discussed, including implementation of such a doping concentration estimation technique.
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