Application Specific 1200V Planar and Trench IGBTs

Abstract

We compare planar and trench non-punch through (NPT) insulated gate bipolar transistors (IGBT) static and dynamic characteristics and evaluate them for motor drive, UPS, IH (induction heating) and switched mode power supply applications. The power supply market is mostly driven by high speed power devices and is presently dominated by MOSFET. The uninterruptible power supply (UPS) IGBTs need moderately high speed switching where as motor drive applications need low conduction loss and moderate switching speed devices. Some of these applications need good short circuit withstand time (SCWT). The planar IGBT has more SCWT and avalanche capability and is better suited for motor control. On the other hand, trench IGBT has better tradeoff curve and hence is a good choice for power supplies and IH markets. These new high speed NPT IGBTs can become cost effective for applications such as UPS, motor drive, IH as well as SMPS market by reducing overall loss over other 1200V IGBTs and regular 1000-1200 volts MOSFETs. By using these IGBTs, the efficiency can be improved or other trade off such as cost reduction, size reduction or increase in power density may be implemented. The new NPT IGBTs reduce both the switching and conduction losses over other 1200V IGBTs and MOSFETs. The turn-off switching loss was reduced by 40-60% compared to previous generation IGBTs and the conduction loss was reduced drastically compared to MOSFETs and IGBTs, especially at high junction temperature. NPT2 planar IGBT offers best of both worlds - lower cost and better performance.