Abstract
In order to optimally utilize insulated gate bipolar transistors (IGBT) in high power converters, the limitations to high temperature performance of these devices need to be clearly identified. This paper presents the influence of electrothermal effects on the switching characteristics and reliability of punch-through (PT) and nonpunch-through (NPT) IGBTs. NPT IGBTs are shown to be less temperature-sensitive than PT IGBT. Drift region thickness and carrier lifetime have been identified as the crucial physical parameters affecting the electrical performance of IGBTs. Optimal utilization of these devices in high power electronic converters requires a careful trade-off of these physical parameters.
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