Abstract
We made a transient analysis of an InGaAs/In(AlGa)As resonant tunneling hot electron transistor (RHET) using time-dependent ensemble Monte Carlo simulation. We simulated the transient characteristics of electron transport in the collector barrier region and the collector current of the RHET. We accounted for the hot electron current and displacement current. We found that the collector current delay is about half the transit time due to the displacement current.
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