Abstract

We discuss two electrochemical plating approaches for nanotwinned copper (ECP nt-Cu) - Gen 1 and Gen 2. These two approaches allow control over columnar width and transition layer thickness on Cu substrates, enabling the filling of nanotwinned Cu for bonding applications. Both approaches produce stable nt-Cu structures with minimal transition layers when electroplated on (111) Cu substrate. However, grain size, transition layer thickness on polycrystalline substrates and feature-filling behavior differ. The researchers suggest that the choice between Gen 1 and Gen 2 depends on the feature size, aspect ratio and applications. In addition, further exploration into other additives may improve bottom-up filling capabilities, enabling more versatility for applications. Both approaches enable the filling of nanotwinned Cu inside bottom-seeded and complete-seeded features, with 100% nanotwin growth parallel to the substrate for bottom-seeded features. However, nanotwin growth percentage and direction depend on feature aspect ratio and size for complete-seeded features. Gen 2 tends to have less sidewall growth due to its smaller grain size and is more compatible with other additivies, making it promising for high aspect ratio small features.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.