Abstract
In this work, a TCAD-based simulation approach has been proposed to analyze 3-nm long p-type nanosheet (NS) field-effect transistors (FETs). The effects of the number of conducting channels on device performance have been studied in detail. As a proof-of-concept, the advanced nonplanar FinFET, nanowire FET, and nanosheet FET are compared. Nanosheet transistors show the best performance, and it seems to be the most suitable contender for future technology nodes.
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