Top-Down Etching of Si Nanowires

Abstract

Abstract This chapter provides an overview of fabrication of silicon nanowires by top-down etching methods. The focus will be on wet and dry etching methods to achieve vertically aligned silicon nanowires. We will start by building an understanding of the dry etching process. Then we will delve deeper into the mechanisms, benefits, and drawbacks of these dry etching processes. This is followed by wet etching methods, primarily metal-assisted chemical etching methods. Finally, we will provide a guideline to fabricate vertically aligned Si nanowire arrays with both dry and wet chemical processes.