Abstract
In order to develop terahertz emitting devices based on high temperature superconductor Bi2212, we explored a simple and easy fabrication process of the stand alone type of mesa structures (SAMs) by using a wet etching method. We underscored a fact that a thicker mesa structure up to about 10 μm can be made by finding an appropriate etching process comparing four different solutions in the wet etching processes. In addition, we have also improved a method to produce free standing SAM chips which are not fixed on any substrates by glues. We measured the characteristics of the device fabricated using this wet etching method and observed clear emission from a chip with the dimensions of 170 × 170 × 8.3 μm3 without the local heating signature of back bending behavior in the current–voltage characteristics. This mesa chip is several times thicker than those used previously. Thus, the method shown here enables us to make many thicker SAMs at a time and would be useful to improve the emission power of superconducting terahertz emitters.
Published Version
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