Abstract
Photoluminescence (PL) time decay for annealed and neutron-irradiated amorphous (a-) SiO2 is reported. PL bands at 4.3., 2.7 and 1.9 eV, excited by 7.8 eV radiation from a pulsed F2 laser, are observed for both annealed and neutron-irradiated Suprasil W. The time decay of the 4.3 eV band is <10ns, but the 2.7 and 1.9 eV PL decay slower. In spite of the complexity of several PL bands, the time decays of the two low energy PL bands are simply composed of a couple of decay rates.
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