Abstract
I will discuss a few phenomena related to the metal-silicon dioxide interface. I will review the effect of hydrogen on the metal work function and adhesion in the Pd-SiO2 system, and the effect of sodium on the metal work function in the Hg-SiO2 system. Then I will discuss some recent results on hydrogen induced drift of the flat band voltage of Pd-gate MOS capacitors. The latter effect indicates interactions of atomic hydrogen with the silicon dioxide or with sodium therein.
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