Through-silicon via-induced strain distribution in silicon interposer

Abstract

Strain in silicon induced by Through-Silicon Via (TSV) integration is of particular interest in the frame of the integration of active devices in silicon interposer. Nano-focused X-ray beam diffraction experiments were conducted using synchrotron radiation to investigate the thermally induced strain field in silicon around copper filled TSVs. Measurements were performed on thinned samples at room temperature and during in situ annealing at 400 °C. In order to correlate the 2D strain maps with finite elements analysis, an analytical model was developed, which takes into account beam absorption in the sample for a given diffraction geometry. The strain field along the [335] direction is found to be in the 10−5 range at room temperature and around 10−4 at 400 °C. Simulations support the expected plastification in some regions of the TSV during the annealing step.