Abstract
Abstract This work shows the design of three-valued dynamic random-access memory (DRAM) cell using quantum dot gate field effect transistor. DRAM is very popular for increasing device integration in integrated circuits. Storing multiple numbers of bits in a single DRAM cell increases the device integration further. The process technology is compatible with the conventional silicon process. The various write and read operations of the three-value DRAM cell are also discussed in this work.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
