Year-end Sale % OFF 
Abstract
It is proposed that cleavage of Si to form Si(111) (2×1) occurs by the scission of three bonds between the closely spaced double layers, rather than by the severing of the single bond that connects the double layers. It is shown that three‐bond scission occurs in the behavior of dislocations in Si. Models of the surface structure based on this cleavage process are presented and discussed in light of the current understanding of this surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
