Abstract
AbstractThe EBIC data obtained from individual edge and Frank partial dislocations in Si, and described in other publications, are related to defect parameters, such as the capture cross‐section for minority carriers, which determine electrical recombination properties of dislocations. A two stage model for the capture of minority carriers by dislocations is developed and shown to correctly account for the temperature‐dependence of the EBIC contrast obtained from these dislocations.
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