Abstract
AbstractCeO2 Thin films were prepared by metal‐organic chemical vapor deposition (MOCVD) using tetrakis(2,2,6,6‐tetramethyl‐3,5‐heptanedionato)cerium(iv), [Ce(thd)4], as the precursor. The films were grown in a horizontal cold‐wall reactor at low pressure and temperatures of 400–900°C in an atmosphere of argon/oxygen. SrTiO3, yttria stabilized zirconia (YSZ), and MgO were used as substrates. Films were prepared on single crystalline substrates with a (100) orientation as well as on polycrystalline YSZ. The film microstructure was investigated by X‐ray diffraction and the surface morphology was studied by scanning electron microscopy (SEM). The growth rate was determined using data obtained by profilometry and cross‐section SEM. The films are polycrystalline with a (100) preferential orientation with respect to the substrate orientation. Low oxygen partial pressures deteriorated the crystalline quality. The SEM images of the surface and the cross sections demonstrated a columnar microstructure. The growth rates in the range of 25–250 nm/h were strongly dependent on the precursor feeding rate but less affected by the deposition temperature and substrate material.
Published Version
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