Abstract
The thermal conductivities and the thermoelectric powers of two-dimensional hole gases in fully strained Si/Si 0.8Ge 0.2 heterostructures have been measured for the first time in the temperature range 3 K to 25 K, and for carrier sheet densities in the range 0.2 to 1×10 12 cm −2. The thermopower is dominated by the phonon drag contribution and a fit to theory yields a value of 4.5 eV for the acoustic phonon deformation potential, with no other adjustable parameters. © 1997 Elsevier Science S.A.
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