Hall and drift mobility of polar p-type semiconductors. II. Application to ZnTe, CdTe, and ZnSe

Abstract

For pt. I see ibid., vol. 6, 2967 (1973). The temperature dependence of the Hall and drift mobility of p-type ZnTe, CdTe, and ZnSe is investigated accounting for acoustic and optical deformation potential, piezoelectric, and polar optical scattering. In the case of p-ZnSe the mobility data published previously cannot be explained by these scattering mechanisms. For p-ZnTe and p-CdTe the calculated mobility is in good accord with experimental results below room temperature. Acoustic deformation potential and polar optical scattering are found to be the dominant scattering mechanisms in the temperature range considered here. The mobility of p-CdTe is calculated by treating the polaron heavy hole mass as adjustable. The value finally used is 0.8m0.