Abstract
The authors report on the thermal stability of Ge metal-oxide-semiconductor (MOS) devices. Ge MOS capacitors with ZrO2 high-k gate dielectric and TaN metal gates were fabricated on Ge epitaxial films. Ge MOS capacitors exhibited a very low gate leakage current density of ∼1×10−6A∕cm2 with a capacitance equivalent thickness of 13Å. The excellent electrical characteristics, however, degraded when Ge∕ZrO2 gate stacks were subsequently annealed at elevated temperatures that are potentially used for transistor fabrication. The thermal degradation was due primarily to the formation of interfacial Ge oxides. Ge oxidation temperature was identified using surface analysis and correlated with electrical characteristics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.