Abstract
AbstractMetal–oxide–semiconductor high‐electron‐mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO2. The composition of the EB deposited ZrO2 thin films was confirmed using X‐ray photoelectron spectroscopy (XPS). The fabricated ZrO2‐based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high‐electron‐mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO2‐based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on‐voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO2 dielectric films for MOSHEMT devices. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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