Abstract
Superior melt growth of ribbon crystals by thermal profile control that is continuously variable, inert, and capable of heat extraction has been achieved. In the device developed, multiple inert-gas jets are directed at various parts of the hot zone, each with individually controlled flow adjustment. In a furnace at 1200°C, the temperature at one edge of a 38-mm-wide ribbon growth zone can be varied at a rate of 6.8°C per liter per minute of argon flow. Asymmetrical temperature profiles in the zone can be flattened to within ±1°C or symmetrically tailored. Silicon ribbons having uniform widths of 38 and 50 mm and grown with a high melt meniscus have been produced by the capillary action shaping technique with inert-gas thermal balancing. Such crystals show minority carrier lifetime values of up to about 300 μs.
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