Silicon ribbon growth by a capillary action shaping technique. Quraterly technical progress report No. 8

Abstract

The crystal-growth method under investigation is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. Progress in 50-mm-wide ribbon growth is detailed. Over 11 meters of uniform 50-mm-wide ribbon have been grown this quarter. Fuller advantage has been taken of the potential benefits of high melt meniscus (HMM) growth. 50-mm ribbons less than 0.27 mm in thickness were produced with zero SiC particle density, smooth reflective surfaces, and lifetimes greater than 20 ..mu..sec for electrical charge carriers. It has also been demonstrated that quartz crucibles can be used through at least four melt-down cycles. A computer analysis model of competing sheet growth techniques is presented and discussed. (WHK)