Abstract
MOS C-t measurements were used to characterize lifetime in CAST crystals and its dependency on crystal defects. Four classes of ribbon perfection are defined. These perfection categories are coordinated with lifetime ranges and efficiency ranges of solar cells. Lifetime degrading properties of different defects are qualitatively discussed in terms of ''electrical activity.'' Electrical activity measurements of crystallographic defects in ribbons were made through the SEM EBIC techniques using Schottky contacts and p-n junction for EBIC contrast. Quantitative ''electrical activity'' measurements of line defects in ribbons were made through carrier diffusion length measurements. Line defects are shown to decrease minority-carrier lifetime by one to two orders of magnitude. (WDM)
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