Abstract
Avalanche breakdown voltage (ABV) of an implanted planar p- n junction was calculated taking the junction curvature into consideration. Curvature was determined from the two-dimensional form of LSS-profiles incorporating lateral spread of implanted ions. Supposing a one-sided abrupt junction, theoretical ABVs are compared with experimental values. The junctions were produced by 20–80 keV boron implantation into 〈111〉 oriented, 1·5 ohmcm silicon. The structure was gate-controlled to set the surface into flat-band condition. The model satisfactorily describes the ABVs of fully annealed implanted planar junctions. For partially annealed diodes, the increase in ABV was attributed to effective curvature due to the depth-dependence of the electrically active portion.
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