Abstract
The use of Bi solutions as in-situ wash melts in the liquid phase epitaxial (LPE) growth of (CdHg)Te from Te-rich solutions onto CdTe substrates is described. Bismuth has several advantages for this purpose: (i) the solubility of CdTe in it at the LPE growth temperature (≌460°C) is such that a reasonable rate of removal (≌10 μm min -1) is achieved; (ii) the removal of the wash melt is complete, hence avoiding contamination of the on coming growth solution; (iii) it has a very low vapour pressure; (iv) it has a very low segregation coefficient so that any small amounts of Bi which were picked up by the Te growth solution would only be incorporated into the growing (CdHg)Te layer at very low levels. The epitaxial layers grown with a wash melt treatment of the substrate have been assessed by Secondary Ion Mass Spectrometry (SIMS) and Hall measurements.
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