Abstract
The interfacial layer formed during the soaking procedure of liquid phase epitaxy (LPE) growth and the heat-up procedure to the growth temperature of metalorganic vapor phase epitaxy (MOVPE) was investigated by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). A thin interfacial layer between an epitaxially grown GaInAsP layer and the concave region of the corrugated InP grating is formed in LPE growth using a GaAs cover crystal. The thickness of this interfacial InAsP layer in the concave region of corrugation is increased with increased AsH 3 partial pressure and heat-up time in MOVPE. The arsenic composition in the InAsP layer also increased with increased AsH 3 partial pressure. Dislocations and defects were not generated in LPE growth using a GaAs cover crystal and using an AsH 3 over pressure and heat-up procedure to the growth temperature in MOVPE.
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