Liquid phase epitaxial growth of GaP layers on textured GaP (1 1 1)B substrates

Abstract

Liquid phase epitaxial (LPE) growth of GaP layers was carried out on pyramidal textured GaP (1 1 1)B substrates prepared using photolithographic masking followed by wet chemical etching. High quality LPE layers with both pyramidal textured p–n junction interfaces and flat surfaces were realized. LPE growth evolution studies revealed that in the early stage of growth, growth mainly occurred on the base floor and the side walls of the pyramids, with hardly any deposition on the top surfaces of pyramids. The valleys between the pyramids were gradually filled, resulting in flat layer surfaces after an appropriate growth time. Field emission scanning electron microscopy analysis on cleaved cross-sections showed sharp textured p–n junction interfaces with periodically arranged pyramidal textured features, and no structural defects were observable. I– V characteristics of the GaP p–n junction diodes confirmed that LPE growth on textured substrates did not introduce defect states, which may degrade device performance.