Abstract
During liquid phase epitaxial (LPE) growth of Hg 1− x Cd x Te layers from Te-rich solutions, a way of maintaining equilibrium Hg pressure over the solution has to be set up, otherwise an excessive and uncontrolled equilibrium temperature change may occur that is detrimental to the quality of epilayers and run-to-run reproducibility. In this paper, a quantitative calculation for the variations of the melting point and the mole fraction of the growth solution caused by the nonequilibrium Hg pressure has been presented based on the associated solution model and phase diagram theory. Experimental data have also been given for comparison. The obtained results can be used directly to guide the liquid phase epitaxy growth of HgCdTe.
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