Abstract
An exponential doping NEA InGaAs photocathode is theoretically proposed to apply in the near infrared streak camera. The photocathode time response is calculated and analyzed by using a photoelectron non-steady method. The numerical results show that the excited electrons in the InGaAs active layer is accelerated due to the built-in electric field induced by the exponential doping structure, which shortens the transport time of minority carriers in the photocathode and thus, the time response is greatly improved. In addition, the exponential doping InGaAs photocathode possesses time response of less than 10 picoseconds and near-infrared quantum efficiency of 10%.
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