Abstract
In order to improve the performance of the photocathode, a kind of photocathode with exponential doping structure is designed and grown; meanwhile two other kinds of photocathodes with uniform doping structure and gradient doping structure are also designed. Through comparing their quantum efficiencies, the exponential doping photocathode has the best quantum efficiency. The inherent mechanism leading to the increase of the diffusion length is analyzed in detail. The diffusion length formula of the photo excited electron in the exponential doping structure is deduced, and the diffusion length in the activation layer is calculated. The result has significance to further study the GaN photocathode.
Published Version
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