Abstract
ABSTRACT Barium tin titanate Ba(SnxTi1−x)O3 (BTS, x = 0.05,0.1,0.15,0.2,0.25) thin films have been prepared by sol-gel technique on Pt/Ti/SiO2/Si substrates. The influences of Sn content on the evolution of the phase and microstructure of the thin films were examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current electric field. The result shows that the Sn content strongly influences the microstructure and the dielectric properties of the films. This work clearly reveals the highly promising potential of BTS films for application in tunable microwave devices.
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